GAGG(Ce) Array
Applications of GAGG(Ce) Array
- Gamma-ray detection
X-ray medical imaging
High energy physics
Positron Emission Tomography-Computed Tomography(PET-CT)
Single photon emission computed tomography(SPECT)
Advantages of GAGG(Ce) Array
- Exceptional Light Output: Boasts a high light yield (>50,000 photons/MeV), ensuring an excellent signal-to-noise ratio and superior energy resolution for weak signal detection.
Ultra-Fine Pixel Customization: Capable of processing pixel dimensions down to sub-millimeter scales (e.g., 1.0mm x 1.0mm or smaller) with consistent geometry to maximize spatial resolution.
Advanced Reflector Optimization:Utilizes premium diffuse reflectors (such as BaSO4 or TiO2 layers) to achieve optimal optical isolation between pixels and minimize cross-talk.
Non-Hygroscopic & Stable: Unlike traditional hygroscopic scintillators, the GAGG(Ce) crystal is completely non-hygroscopic and chemically stable, eliminating the need for complex encapsulation and simplifying detector integration.
Specifications of GAGG(Ce) Array
- Linear array: 1×8; 1×16; 1×32; 1×64 etc. (customized upon request)
2-D array: 8×8; 16×16; 64×64 etc. (customized upon request)
Minimal pixel size: 0.2 mm x 0.2 mm
| Reflector Types and Thicknesses of GAGG(Ce) Array | |
| Material | Thickness of reflector material + adhesive |
| BaSO4 | ≥0.1 mm |
| ESR | 0.08 mm |
| E60 | 0.075 mm |
| TiO2 | ≥0.1 mm |
| Different Types of GAGG(Ce) Crystal | |||
| Type | Light yield | Decay time | Afterglow |
| High light output type | 54000 photons/keV | <150 ns | ≤0.10%@20ms |
| Low afterglow type | 45000 photons/keV | <70 ns | ≤0.02%@20ms |
| Fast decay time type | 30000 photons/keV | <50 ns | ≤0.10%@20ms |
| Balanced type | 42000 photons/keV | <90 ns | ≤0.10%@20ms |
| Properties of GAGG(Ce) Crystal | ||||
| Product Type | High light output type | Low afterglow type | Fast decay time type | Balanced type |
| Scintillation decay time (ns) | ＜150 | ＜70 | ＜50 | ＜90 |
| Emission peak wavelength (nm) | 520 | 520 | 520 | 520 |
| Refractive index (peak wavelength) | 1.9 | 1.9 | 1.9 | 1.9 |
| Density (g/cm3) | 6.6 | 6.6 | 6.6 | 6.6 |
| Light yield (photoelectron /keV) | 54 | 45 | 30 | 42 |
| Energy resolution ( 137Cs) (%) | 6 | 6 | 7% | 6% |
| Radiation hardness (rad) | 10^5 | 10^5 | 10^5 | 10^5 |
| Crystal structure | Cube | Cube | Cube | Cube |
| Cleavage plane | No | No | No | No |
| Hygroscopic | No | No | No | No |
| Mohs hardness | 8 | 8 | 8 | 8 |
| Afterglow | ≤0.10%@20ms | ≤0.02%@20ms | ≤0.10%@20ms | ≤0.10%@20ms |
Q: Why is GAGG(Ce) preferred over BGO or LYSO for certain imaging applications?
A: While LYSO and BGO are excellent scintillators, GAGG(Ce) offers an outstanding combination of high light yield (nearly double that of LYSO) and no intrinsic background radiation. This makes this material exceptionally ideal for high-sensitivity and low-background radiation environments.
Q: What types of reflector materials do you use for GAGG(Ce) arrays?
A: We primarily offer high-purity BaSO4 (Barium Sulfate) and TiO2 (Titanium Dioxide) epoxy mixtures for diffuse reflection. For specific high-efficiency requirements, custom specular reflector films can also be integrated into the array assembly.
Q: How does ATR Crystal control pixel-to-pixel uniformity in a 2D array?
A: We ensure uniformity by strictly controlling the doping homogeneity during the crystal growth phase and utilizing advanced automated dicing equipment. Each array undergoes rigorous quality inspection to guarantee uniform light output across all individual pixels.
