GAGG(Ce) Array
What Is a GAGG(Ce) Scintillator Array?
GAGG(Ce) scintillator arrays are pixelated detector components made from cerium-doped gadolinium aluminum gallium garnet. The material is known for high light output, good energy resolution, non-hygroscopic handling, and no lutetium-related intrinsic background.
In an array, individual GAGG(Ce) pixels are separated by reflector material to control light sharing and improve position-sensitive gamma or X-ray detection. This makes GAGG(Ce) arrays useful for medical imaging, security inspection, gamma-ray detection, high-energy physics, and low-background detector modules.
ATR Crystal manufactures custom linear and 2D GAGG(Ce) arrays according to pixel size, pixel count, reflector material, surface finish, detector readout, and light-output uniformity requirements.
Applications of GAGG(Ce) Arrays
Gamma-ray detection and imaging modules
X-ray medical imaging and CT detector research
Security inspection and radiation imaging systems
High-energy physics detector modules
PET-CT and compact gamma detector development
SPECT, spectroscopy, and low-background measurement setups
Advantages of GAGG(Ce) Pixelated Arrays
- High light outputGAGG(Ce) variants can provide high signal output, supporting good detector sensitivity and energy resolution.
- No intrinsic background from Lu-176Unlike LYSO-based scintillators, GAGG(Ce) does not contain lutetium, which is useful in low-background applications.
- Non-hygroscopic handlingThe material is chemically stable and does not require hermetic sealing like NaI(Tl) or CsI(Na).
- Fine pixel customizationCustom pixel size, pitch, and array layout can be designed for the target readout device and spatial resolution.
- Reflector optimizationBaSO4, ESR, E60, TiO2, PTFE, and custom reflector systems can be selected to balance light collection and crosstalk.
- Multiple material variantsHigh light output, low afterglow, fast decay, and balanced types are available for different detector requirements.
GAGG(Ce) Array Specifications
Array Geometry and Assembly Options
| Item | Typical Options |
|---|---|
| Array type | Linear array, 2D pixelated array, offset array, or customized detector layout |
| Linear array examples | 1×8, 1×16, 1×32, 1×64, or customized layouts |
| 2D array examples | 8×8, 16×16, 64×64, or customized layouts |
| Minimum pixel size | Down to 0.2 x 0.2 mm when geometry and yield allow |
| Reflector materials | BaSO4, ESR, E60, TiO2, Teflon / PTFE, or custom reflector |
| Surface finish | Polished, roughened, painted, or application-specific finish |
| Readout matching | SiPM array, PSPMT, photodiode, CCD / CMOS coupling, or custom readout |
Reflector Material and Typical Thickness
| Reflector Material | Typical Reflector + Adhesive Thickness |
|---|---|
| BaSO4 | Greater than or equal to 0.1 mm |
| ESR | Approx. 0.08 mm |
| E60 | Approx. 0.075 mm |
| TiO2 | Greater than or equal to 0.1 mm |
GAGG(Ce) Material Variants
| Type | Listed Light Output | Decay Time | Afterglow |
|---|---|---|---|
| High light output type | 54 p.e./keV class | <150 ns | <=0.10% @ 20 ms |
| Low afterglow type | 45 p.e./keV class | <70 ns | <=0.02% @ 20 ms |
| Fast decay time type | 30 p.e./keV class | <50 ns | <=0.10% @ 20 ms |
| Balanced type | 42 p.e./keV class | <90 ns | <=0.10% @ 20 ms |
Physical and Scintillation Properties
| Parameter | Typical Value |
|---|---|
| Emission peak wavelength | 520 nm |
| Refractive index at peak wavelength | 1.9 |
| Density | 6.6 g/cm3 |
| Energy resolution with 137Cs | Approx. 6-7%, depending on material type and test condition |
| Radiation hardness | 10^5 rad |
| Crystal structure | Cubic garnet structure |
| Cleavage plane | No |
| Hygroscopicity | Non-hygroscopic |
| Mohs hardness | 8 |
GAGG(Ce) Array vs. LYSO(Ce) Array
GAGG(Ce) and LYSO(Ce) arrays are both used for high-performance radiation imaging, but they are not interchangeable in every design. GAGG(Ce) is often selected when high light output, no lutetium intrinsic background, and non-hygroscopic handling are priorities. LYSO(Ce) is often selected for very fast timing applications such as TOF-PET.
| Design Point | GAGG(Ce) Array | LYSO(Ce) Array |
|---|---|---|
| Light output | High; variant-dependent | High, but typically lower than high-output GAGG(Ce) |
| Intrinsic background | No Lu-176 intrinsic background | Contains Lu-176 intrinsic background |
| Timing | Variant-dependent, typically slower than LYSO(Ce) | Strong choice for fast timing and TOF-PET |
| Emission peak | 520 nm | 420 nm |
| Typical use | Low-background imaging, CT, gamma detection, security systems | PET, TOF-PET, high-rate gamma detection |
Design and Quality Control
- Pixel geometry inspectionPixel size, total array dimensions, pitch, and edge condition are checked against the drawing.
- Light output testingArray light output and pixel-to-pixel uniformity can be tested according to project requirements.
- Crosstalk controlReflector thickness, bonding process, and optical isolation are selected to match the detector design.
- Afterglow option selectionLow-afterglow material can be selected for CT or high-frame-rate imaging designs where residual signal matters.
- Readout matchingArray geometry can be matched to SiPM, PSPMT, photodiode, or optical imaging readout.
- Custom drawing reviewATR Crystal can review pixel layout, tolerance, and reflector requirements before production.
GAGG(Ce) Array Quotation Requirements
For a custom GAGG(Ce) array quotation, please provide pixel size, final pitch, number of pixels, array thickness, reflector material, reflector thickness, readout face requirement, external wrapping, photosensor model and drawing if available. The final pitch should include reflector and bonding layers, especially when the array must match a SiPM or photodiode matrix.
If the project is still a material evaluation rather than a fixed array design, a monolithic GAGG(Ce) scintillation crystal may be a better first sample. For material-level selection notes, read the GAGG crystal selection guide.
Frequently Asked Questions
Original Product Data Tables
The following technical tables are retained from the existing product page for specification review.
| Reflector Types and Thicknesses of GAGG(Ce) Array | |
| Material | Thickness of reflector material + adhesive |
| BaSO4 | ≥0.1 mm |
| ESR | 0.08 mm |
| E60 | 0.075 mm |
| TiO2 | ≥0.1 mm |
| Different Types of GAGG(Ce) Crystal | |||
| Type | Light yield | Decay time | Afterglow |
| High light output type | 54000 photons/MeV | <150 ns | ≤0.10%@20ms |
| Low afterglow type | 45000 photons/MeV | <70 ns | ≤0.02%@20ms |
| Fast decay time type | 30000 photons/MeV | <50 ns | ≤0.10%@20ms |
| Balanced type | 42000 photons/MeV | <90 ns | ≤0.10%@20ms |
| Properties of GAGG(Ce) Crystal | ||||
| Product Type | High light output type | Low afterglow type | Fast decay time type | Balanced type |
| Scintillation decay time (ns) | ＜150 | ＜70 | ＜50 | ＜90 |
| Emission peak wavelength (nm) | 520 | 520 | 520 | 520 |
| Refractive index (peak wavelength) | 1.9 | 1.9 | 1.9 | 1.9 |
| Density (g/cm3) | 6.6 | 6.6 | 6.6 | 6.6 |
| Light yield (photoelectron /keV) | 54 | 45 | 30 | 42 |
| Energy resolution ( 137Cs) (%) | 6 | 6 | 7% | 6% |
| Radiation hardness (rad) | 10^5 | 10^5 | 10^5 | 10^5 |
| Crystal structure | Cube | Cube | Cube | Cube |
| Cleavage plane | No | No | No | No |
| Hygroscopic | No | No | No | No |
| Mohs hardness | 8 | 8 | 8 | 8 |
| Afterglow | ≤0.10%@20ms | ≤0.02%@20ms | ≤0.10%@20ms | ≤0.10%@20ms |
