Yb:YAG Laser Crystals
Thermal bottlenecks are the ultimate enemy of high-power diode-pumped systems. ATR Crystal engineers Ytterbium-doped Yttrium Aluminum Garnet (Yb:YAG) specifically to shatter the thermal limitations of traditional Nd-doped media, unlocking unprecedented power scaling and stability.Minimal Thermal Loading: Generates 3 to 4 times less heat per unit of pump power compared to Nd:YAG, effectively eliminating severe thermal lensing.
Broad Absorption Bandwidth: Significantly relaxes the strict temperature control requirements for diode lasers, ensuring fail-safe continuous performance.
Extended Energy Storage: Features a dramatically longer upper-laser level lifetime, optimized for high-energy, ultra-intense pulsed applications.
Product Category:
Laser Crystals
Advantages
1 ) Very low fractional heating, less than 11%
2 ) Very high slope deficiency
3 ) Broad absorption bands, about 8nm@940nm
4 ) No excited-state absorption or up-conversion
5 ) Conveniently pumped by reliable in GaAs diodes
6 ) High thermal conductivity@ 940nm (or 970nm)
7 ) High optical quality
| Specifications of Yb YAG Laser Crystals | |
| Material | Yb:YAG |
| Yb-Dopant Concentration | 0.5%–25at% |
| Orientation | <111> or <100> |
| Dimensions | Diameter:2mm-50mm, Length:5-180mm(Upon customer’s request) |
| Clear Aperture | Central 95% |
| Extinction Ratio | >30dB (depends on actual size) |
| Diameter Tolerance | +0/-0.04mm |
| Length Tolerance | +0.5/-0mm |
| Flatness | <λ/10@632.8nm |
| Damage Threshold | >700MW/cm2 @10ns 10HZ |
| Barrel Finish | Ground Finish 400#Grit |
| Scratch/Dig | 10-5@MIL-0-13830A |
| Parallelism | <10 arc seconds |
| Perpendicularity | <5 arc minutes |
| Wavefront Distortion | λ/8 per inch @632.8nm |
| Anti-Reflection Coating | R<0.2%@1030nm per surface |
| Properties of Yb YAG Laser Crystals | |
| Laser Transition | 2 F 5/2→2 F 7/2 |
| Laser Wavelength | 1030nm |
| Photon Energy | 1.93×10-19 J(@1030nm) |
| Emission Linewidth | 9nm |
| Emission Cross Section | 2.0×10-20 cm2 |
| Fluorescence Lifetime | 1.2ms |
| Diode Pump Band | 940nm or 970nm |
| Pump Absorption Band Width | 8nm |
| Index of Refraction | 1.82 |
| Thermal Optical Coefficient | 9×10-6/℃ |
| Loss Coefficient | 0.003 cm-1 |
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