GAGG(Ce) Array
Cerium-doped Gadolinium Aluminum Gallium Garnet, GAGG(Ce), is an advanced detection material designed for high-end Computed Tomography (CT) and advanced security inspection equipment. It features a compelling combination of high density, exceptionally high light output, a short decay time, and a remarkably low radioactive background. Furthermore, GAGG(Ce) boasts a stable chemical composition, an absence of cleavage planes, and a completely non-hygroscopic nature. These physical properties make it highly processable and easy to assemble, ensuring its broad applicability in demanding fields such as radiation detection and high-energy physics.At Atr Crystal, we manufacture custom GAGG(Ce) linear and 2D arrays tailored to our customers' precise design requirements, accommodating specific pixel sizes, total pixel counts, reflector materials, and crystal surface finishes. We provide a comprehensive range of design configurations and reflector options to perfectly optimize array performance. Our advanced manufacturing process guarantees maximum light output, excellent pixel-to-pixel uniformity, and minimal optical crosstalk. Additionally, custom offset GAGG(Ce) arrays (multilayer configurations) and specialized material variants—including balanced, fast-decay, low-afterglow, and high-light-output types—are readily available upon request.
Product Category:
Pixellated Array
Applications of GAGG(Ce) Array
1 )Gamma-ray detection
2 )X-ray medical imaging
3 )High energy physics
4 )Positron Emission Tomography-Computed Tomography(PET-CT)
5 )Single photon emission computed tomography(SPECT)
Advantages of GAGG(Ce) Array
1 )High light output
2 )High energy resolution
3 )Fast decay time
4 )No background
5 )No hygroscopy
Specifications of GAGG(Ce) Array
1 )Linear array: 1×8; 1×16; 1×32; 1×64 etc. (customized upon request)
2 )2-D array: 8×8; 16×16; 64×64 etc. (customized upon request)
3 )Minimal pixel size: 0.2 mm x 0.2 mm
| Reflector Types and Thicknesses of GAGG(Ce) Array | |
| Material | Thickness of reflector material + adhesive |
| BaSO4 | ≥0.1 mm |
| ESR | 0.08 mm |
| E60 | 0.075 mm |
| TiO2 | ≥0.1 mm |
| Different Types of GAGG(Ce) Crystal | |||
| Type | Light yield | Decay time | Afterglow |
| High light output type | 54000 photons/keV | <150 ns | ≤0.10%@20ms |
| Low afterglow type | 45000 photons/keV | <70 ns | ≤0.02%@20ms |
| Fast decay time type | 30000 photons/keV | <50 ns | ≤0.10%@20ms |
| Balanced type | 42000 photons/keV | <90 ns | ≤0.10%@20ms |
| Properties of GAGG(Ce) Crystal | ||||
| Product Type | High light output type | Low afterglow type | Fast decay time type | Balanced type |
| Scintillation decay time (ns) | ＜150 | ＜70 | ＜50 | ＜90 |
| Emission peak wavelength (nm) | 520 | 520 | 520 | 520 |
| Refractive index (peak wavelength) | 1.9 | 1.9 | 1.9 | 1.9 |
| Density (g/cm3) | 6.6 | 6.6 | 6.6 | 6.6 |
| Light yield (photoelectron /keV) | 54 | 45 | 30 | 42 |
| Energy resolution ( 137Cs) (%) | 6 | 6 | 7% | 6% |
| Radiation hardness (rad) | 10^5 | 10^5 | 10^5 | 10^5 |
| Crystal structure | Cube | Cube | Cube | Cube |
| Cleavage plane | No | No | No | No |
| Hygroscopic | No | No | No | No |
| Mohs hardness | 8 | 8 | 8 | 8 |
| Afterglow | ≤0.10%@20ms | ≤0.02%@20ms | ≤0.10%@20ms | ≤0.10%@20ms |
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