

Ti:Sapphire Laser Crystals
When engineering broadly tunable and femtosecond laser systems, optical scatter is fatal. ATR Crystal utilizes the advanced Temperature Gradient Technique (TGT) to grow massive, optically flawless Titanium-doped Sapphire (Ti:Sapphire) crystals, delivering the ultimate high-gain core for the world’s most intense pulsed lasers.Massive Flawless Apertures: Delivering large-scale geometries (up to Dia. 30x30mm) with absolutely zero light scatter and an ultra-low dislocation density of
Product Category:
Laser Crystals
| Specifications of Ti Sapphire Laser Crystals | |
| Orientation: | Optical axis C normal to the rod axis |
| Ti2O3 concentration: | 0.03 – 0.25wt % |
| Figure Of Merit (FOM): | 100~250 Upon customer request |
| End configurations: | Flat/Flat or Brewster/Brewster ends |
| Flatness: | l /8 ~1/10@ 633 nm |
| Parallelism: | 10 arcsec |
| Surface finishing: | 10/5 scratch/dig to MIL-O-13830A |
| Clear Aperture: | > 90% |
| Chamfer: | < 0.1 mm @ 45deg. |
| Size | Upon customer request |
| Coating | AR/HR coating upon customer’s request |
| Damage Threshold | 750MW/CM2 at 1064nm, TEM00, 10ns, 10Hz |
| Quality Warranty Period | One year under proper use |
| Optical and Spectral Properties of Ti Sapphire | |
| Absorption range | 400 – 600 nm |
| Tuning range | 660 – 1050 nm |
| Emission peak | 795 nm |
| Absorption peak | 488 nm |
| Absorption cross-section at a peak wavelength | 38×10^-20 cm2 |
| Emission Cross-section | Σ532nm = 4.9×10^-20 cm2 |
| Emission Cross-section | Σ490nm = 6.4×10^-20 cm2 |
| Emission cross-section | Σ790nm = 41×10^-20 cm2 |
| dn/dT | 13×10^-6 K-1 |
| Thermal conductivity | 33 Wm-1K-1 |
| Laser action | 4-level vibronic |
| Fluorescence lifetime | 3.2 µs (T=300K) |
| Refractive index | 1.76 @ 800 nm |
| Chemical formula | Ti3+:Al2O3 |
| Crystal structure | Hexagonal a=4.758, c=12.991 |
| Density | 3.98 g/cm3 |
| Melting point | 2040℃ |
| Mohs hardness | 9 |
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